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1. Crystallography and Product Principles of Silicon Carbide

1.1 Polymorphism and Atomic Bonding in SiC


(Silicon Carbide Ceramic Plates)

Silicon carbide (SiC) is a covalent ceramic substance composed of silicon and carbon atoms in a 1:1 stoichiometric proportion, differentiated by its impressive polymorphism– over 250 known polytypes– all sharing solid directional covalent bonds however differing in piling sequences of Si-C bilayers.

The most technologically appropriate polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal kinds 4H-SiC and 6H-SiC, each exhibiting refined variations in bandgap, electron wheelchair, and thermal conductivity that influence their viability for certain applications.

The stamina of the Si– C bond, with a bond power of roughly 318 kJ/mol, underpins SiC’s phenomenal firmness (Mohs firmness of 9– 9.5), high melting point (~ 2700 ° C), and resistance to chemical deterioration and thermal shock.

In ceramic plates, the polytype is usually picked based on the planned use: 6H-SiC is common in structural applications because of its ease of synthesis, while 4H-SiC controls in high-power electronic devices for its exceptional charge provider flexibility.

The large bandgap (2.9– 3.3 eV depending on polytype) additionally makes SiC an outstanding electrical insulator in its pure kind, though it can be doped to work as a semiconductor in specialized electronic tools.

1.2 Microstructure and Phase Purity in Ceramic Plates

The performance of silicon carbide ceramic plates is seriously dependent on microstructural attributes such as grain size, density, stage homogeneity, and the visibility of additional phases or contaminations.

Top notch plates are generally made from submicron or nanoscale SiC powders through advanced sintering techniques, resulting in fine-grained, totally dense microstructures that optimize mechanical toughness and thermal conductivity.

Contaminations such as cost-free carbon, silica (SiO TWO), or sintering aids like boron or light weight aluminum have to be thoroughly regulated, as they can create intergranular films that decrease high-temperature stamina and oxidation resistance.

Residual porosity, even at low degrees (

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